Hall effectus Current Sensor Split Core Transducer Featured Image

Hall effectus Current sensorem Split Core Transducer

P / N: MLRH-MMCXLVII

Prima Rated Current:XX / L / C / 200A / 300A / 400A

Output Voltage:2.5 2.5 + 2v

Dual Power:Dual Power 0 + 4v

Voltage Nulla resistere:3KV / 1min

Operating Frequency:50-60Hz

Operating temperatus:XL ° C + 85C

Valerium:Epoxy resin encapsulated

Exterioris:Flamma retardant PBT

Application:Variabilis frequency electrica adjumenta, inverter, ac / DC variabilis-celeritate agitetwitched modus potentia commeatu (SMPS), Uninterruptible Power Victualia (UPS)

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Product Detail

Product Tags

Descriptio

Product Name	Hall effectus Current sensorem Split Core Transducer
P / N	MLRH-MMCXLVII
Prima rated current	XX / L / C / 200A / 300A / 400A
Output voltage	Una potentia 2.5 ± 2v
POTENTIA	Dual Power 0 ± 4v
Voltage Nulla resistere	3KV / 1min
Operating frequency	50-60Hz
Operating temperatus	-40 ℃ + LXXXV ℃
Initium	Epoxy resin encapsulated
PRAETENIGUS	Flamma retardant PBT
Appices	Variabilis frequency electrica adjumenta, inverter, ac / DC variabilis-celeritate coegi Switched Modus Power Victualia (SMPS), Uninterruptible Power commeatus (UPS):

Features

Securus installation

Fenestra structure

Minimum potentiam consummatio, valde bona linearis

Tantum unum consilio ad wide current ratings range

Excelsum immunitatem ad externum intercessiones

Non insertionem damna

Dual Power Hall Current sensorem

Electrical data (ta = 25ºC ± 5ºC)

Rated input	I_PN	20/50/100	A
Mensurae	I_P	± XXX / ± LXXV / ± CL	A
Output voltage	V_o	± 4.0 * (i_P/I_PN)	V
Onus resistentia	R_L	> X	Kω
Copia voltage	V_C	(± XII ± XV) ± V%	V
Accuratio	X_G	@ IPN, T = XXV ° C <± 1.0	%
Voltage offset	V_OE	@ IP = 0, T = XXV ° C <± XXV	mV
Temperature variation V_OE	V_OT	@ IP = 0, -40 ~ + LXXXV ° C <± 1.0 / <D ± 0,5 / <± 0,5	MV / ℃
Temperature variation V_O	V_OS	@ IP = IPN, -40 ~ LXXXV ° C <± 2.5	%
Hysteresis offset voltage	V_OH	@ IP = 0 post I * IPN <± XXV	mV
Linearity Error	Facies	<1.0	% Fs
Di / De DT		> C	A / μs
RESPONSIO Tempus	trado	@ XC% of IPN <5.0	μs
Potentiam consummatio	IC	15V + + <XXIII	mA
Potentiam consummatio	IC	@ -15v <4.5	mA
Bandwidth	BW	@ -3DB, IPN DC-XX	Khz
Voltage VOLTAGE	V_d	@ L / 60Hz, 1min, AC, 1.5ma 4.0	KV

Annuli genus electrica data: (ta = XXV ° C, VC = + 12.0VDC, RL = 2kω)

Parameter		MLRH, 50A / 2v	MLRH-100A / 2v	MLRH-200A / 2v	MLRH-300A / 2v	MLRH-400A / 2v	Unitas
Rated input	I_PN	50	C	CC	CCC	CD	A
Mensurae	I_P	0 ~ ± L	0 ~ ± C	0 ~ ± CC	0 ~ ± CCC	0 ~ ± CD	A
Output voltage	Vo			2.500 ± 2.0 * (i_P/I_PN)			V
Output voltage	Vo	@ IP = 0, T = XXV ° C		2.500			V
Onus resistentia	R_L			> II			Kω
Copia voltage	V_C			+12.0 ± V%			V
Accuratio	X_G	@I_PN, T = XXV ° C		<± 1.0			%
Voltage offset	V_OE	@I_P= 0, T = XXV ° C		<± XXV			mV
Temperature variation V_OE	V_OT	@I_P= 0, -40 ~ + LXXXV ° C		<± 1.0			MV / ℃
Hysteresis offset voltage	V_OH	@ IP = 0 post I * IPN		<± XX			mV
Linearity Error	Facies			<1.0			% Fs
Di / De DT				> C			A / μs
RESPONSIO Tempus	trado	@ XC% de IPN		<3.0			μs
Potentiam consummatio	I_C			15			mA
Bandwidth	BW	@ -3DB, IPN		DC-XX			Khz
Voltage VOLTAGE	Vd	@ L / 60Hz, 1min, ac		2.5			KV

General data:

参数 parameter	符号 symbolum	数值 valorem	单位 unitas
Operating temperatus	T_A	-40 ~ LXXXV	N ° C
Storage temperatus	Ts	-55 ~ CXXV	N ° C
Pondus	m	70	g
Plastic materiales	PBT G30 / G15, Ul94- v0;
Signa	IEC6950-1, MMI
	En50178: MCMXCVIII
	Sj20790-2000

Dimensiones (mm):

Remarks:

I, cum hodierna mensurata est per primaria pin sensorem, in voltage erit bemasured ad output finem. (Nota: quod falsum wiring potest consequuntur in dampnum sensorem).

II, Custom Design in diversis rated initus current et output intentione sunt available.

III, in dynamic perficientur est optimum cum prima foramen si plene impleta;

IV, in prima conductor sit <C ° C;

Rectangulum type electrica data: (ta = XXV ° C, VC = + 12.0VDC, RL = 2kω)

Parameter		Mlrh-200a / 2v	Mlrh4-600a / 2v	Mlrh4-800a / 2v	Mlrh4-1000a / 2v	Mlrh4-1200a / 2v	Mlrh4-2000a / 2v	Unitas
Rated input	Ipn	CC	DC	DCCC	M	MCC	MM	A
Mensurae	IP	0 ~ ± CC	0 ~ ± DC	0 ~ ± DCCC	0 ~ ± M	0 ~ ± MCC	0 ~ ± MM	A
Output voltage	Vo			2.500 ± 2.0 (IP / IPN)				V
Output voltage	Vo	@ IP = 0, T = XXV ° C		2.500				V
Onus resistentia	RL			> II				Kω
Copia voltage	VC			+ 12.0 ± V%				V
Accuratio	XG	@ IPN, T = XXV ° C		<± 1.0				%
Voltage offset	Voe	@ IP = 0, T = XXV ° C		<± XXV				mV
Temperature variation Voe	Voto	@ IP = 0, -40 ~ + LXXXV ° C		<± 1.0				MV / ℃
Hysteresis offset voltage	VOH	@ IP = 0 post I * IPN		<± XX				mV
Linearity Error	Facies			<1.0				% Fs
Di / De DT				> C				A / μs
RESPONSIO Tempus	trado	@ XC% de IPN		<7,0				μs
Potentiam consummatio	IC			15				mA
Bandwidth	BW	@ -3DB, IPN		DC-XX				Khz
Voltage VOLTAGE	Vd	@ L / 60Hz, 1min, ac		6.0				KV

General data:

参数 parameter	符号 symbolum	数值 valorem	单位 unitas
Operating temperatus	TA	-40 ~ LXXXV	N ° C
Storage temperatus	Ts	-55 ~ CXXV	N ° C
Pondus	m	CC	g
Plastic materiales	PBT G30 / G15, Ul94- v0;
Signa	IEC6950-1, MMI
	En50178: MCMXCVIII
	Sj20790-2000