I-Hall Effect Sensor yamanje Splan Split Core Transcucer Featured Image

I-Hall Effect Sensor yamanje splat split transctor

P / N: MLRH-2147

Kukalwe manje:20 / 50/100 / 200A / 300A / 400A

I-Volfage ekhiphayo:Amandla angashadile 2,5 + 2v

Amandla ama-Dual:Amandla ama-Dual 0 + 4v

Ukumelana ne-Voltage:I-3KV / 1min

Imvamisa yokusebenza:50-60hz

Ukushisa okusebenzayo:I-40 ° C ~ + 85c

Ukufakwa:I-epoxy resin ehlanganisiwe

Icala Langaphandle:Flame retardant pbt

Isicelo:I-Frequency Frequency Workly Appleances, inverter, i-AC / DC eguquguqukayo ye-Mode Power Power Power Power Power Power Power (SMPS), Ukuhlinzekwa kwamandla okungaphazamiseki

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Ukufanisa

Igama lomkhiqizo	I-Hall Effect Sensor yamanje splat split transctor
P / n	MLRH-2147
Okwamanje okulinganiselwe kwamanje	20 / 50/100 / 200A / 300A / 400A
Amandla kagesi akhiphayo	Amandla angashadile 2.5 ± 2v
Amandla ama-Dual	Amandla okumbili 0 ± 4V
Ukumelana nokumelana namandla kagesi	I-3KV / 1min
Imvamisa yokusebenza	50-60hz
Ukushisa okusebenzayo	-40 ℃ ~ + 85 ℃
Ukwahlukanisa	I-epoxy resin ehlanganisiwe
Icala Langaphandle	Flame retardant pbt
Aukuhlasela	I-Frequency Frequency Elever Apple kagesi, inverter, i-AC / DC yokuguquguquka kwejubane I-Mode Power Power Supplies (SMPS), Amandla Angafinyelelekiwe Amandla (UPS),

Izici

Ukufakwa okulula

Isakhiwo sewindi

Ukusetshenziswa kwamandla okuphansi, ukuqina okuhle kakhulu

Umklamo owodwa kuphela wezilinganiso eziningi zamanje zokulinganisa

Ukungatheleleki okuphezulu ekuphazanyisweni kwangaphandle

Akukho ukulahleka kokufaka

I-Sensor yamandla e-Dual Power HALL yamanje

Idatha kagesi (TA = 25ºC ± 5ºC)

Okokufaka okulinganiselwe	I_PN	20/50/100	A
Ibanga lokulinganisa	I_P	± 30 / ± 755 / ± 150	A
Amandla kagesi akhiphayo	V_o	± 4.0 * (i_P/I_PN)	V
Ukulayishwa kabusha	R_L	> 10	Isibani
Hlinzeka ngogesi	V_C	(± 12 ~ ± 15) ± 5%	V
Ukuqonda nqo	X_G	@ IPN, T = 25 ° C <± 1.0	%
I-Offset Votage	V_OE	@ IP = 0, T = 25 ° C <± 25	mV
Ukuhluka kokushisa kwe-v_OE	V_OT	@ IP = 0, -40 ~ + 85 ° C <± 1.0 / <± 0,5 / <± 0.5	MV / ℃
Ukuhluka kokushisa kwe-v_O	V_OS	@ IP = IPN, -40 ~ + 85 ° C <± 2.5	%
I-Hysteresis Offset Voltage	V_OH	@ IP = 0, ngemuva kwe-1 * IPN <± 25	mV
Iphutha le-linerity	I-EVR	<1.0	% FS
di / dt		> 100	A / μs
Isikhathi sokuphendula	ugele	@ 90% ye-IPN <5.0	μs
Ukusetshenziswa kwamandla	IC	@ + 15v <23	mA
Ukusetshenziswa kwamandla	IC	@ -15v <4.5	mA
Ibandlawi	BW	@ -3DB, IPN DC-20	Akha
I-Insulation Votage	V_d	@ 50 / 60hz, 1min, AC, 1.5MA 4.0	KV

I-Ring Thayipha Idatha kagesi: (TA = 25 ° C, VC = + 12.0VDC, RL = 2KKωω)

Ipharameter		Mlrh-50a / 2v	Mlrh-100a / 2v	Mlrh-200a / 2v	Mlrh-300a / 2v	Mlrh-400a / 2v	Umuvo
Okokufaka okulinganiselwe	I_PN	50	100	-Mashumi	300	400	A
Ibanga lokulinganisa	I_P	0 ~ ± 50	0 ~ ± 100	0 ~ ± 200	0 ~ ± 300	0 ~ ± 400	A
Amandla kagesi akhiphayo	Vo			I-2.500 ± 2.0 * (i_P/I_PN)			V
Amandla kagesi akhiphayo	Vo	@ IP = 0, T = 25 ° C		I-2.500			V
Ukulayishwa kabusha	R_L			> 2			Isibani
Hlinzeka ngogesi	V_C			+12.0 ± 5%			V
Ukuqonda nqo	X_G	@I_PN, T = 25 ° C		<± 1.0			%
I-Offset Votage	V_OE	@I_P= 0, t = 25 ° C		<± 25			mV
Ukuhluka kokushisa kwe-v_OE	V_OT	@I_P= 0, -40 ~ + 85 ° C		<± 1.0			MV / ℃
I-Hysteresis Offset Voltage	V_OH	@ IP = 0, ngemuva kwe-1 * IPN		<± 20			mV
Iphutha le-linerity	I-EVR			<1.0			% FS
di / dt				> 100			A / μs
Isikhathi sokuphendula	ugele	@ 90% ye-IPN		<3.0			μs
Ukusetshenziswa kwamandla	I_C			15			mA
Ibandlawi	BW	@ -3db, ipn		DC-20			Akha
I-Insulation Votage	Vd	@ 50 / 60hz, 1min, AC		2,5			KV

Imininingwane ejwayelekile:

参数 Ipharamitha	符号 uphawu	数值 Inani	单位 Iyunithi
Ukushisa okusebenzayo	T_A	-40 ~ +85	° C
Ukushisa okushisa	Ts	-55 ~ +125	° C
Ubunzima	m	70	g
Into engopulasitiki	I-PBT G30 / G15, UL94- v0;
Amazinga	IEC60950-1: 2001
	En50178: 1998
	SJ20790-2000

Ubukhulu (mm):

Izimo:

1, lapho kuzolinganiswa khona lapho okukhona njengamanje kuhamba nge-PIN eyinhloko yenzwa, i-voltage izohlelwa ngokuphela kokuphela. (Qaphela: I-wiring yamanga ingahle iholele ekulimaleni inzwa).

2, design ngokwezifiso kokufaka okulinganiselwe okulinganiselwe kwamanje kanye ne-voltage ekhishwayo iyatholakala.

3, ukusebenza okunamandla kuhamba phambili lapho umgodi oyinhloko uma ugcwele ngokuphelele;

I-4, umqhubi wesifundo esiyinhloko kufanele abe <100 ° C;

Idatha kagesi kanxande: (TA = 25 ° C, VC = + 12.0VDC, RL = 2Kkω)

Ipharameter		Mlrh-200A / 2V	Mlrh4-600A / 2V	Mlrh4-800A / 2V	Mlrh4-1000A / 2V	Mlrh4-1200A / 2V	Mlrh4-2000a / 2v	Umuvo
Okokufaka okulinganiselwe	Ips	-Mashumi	I-600	800	1000	I-1200	2000	A
Ibanga lokulinganisa	IP	0 ~ ± 200	0 ~ ± 600	0 ~ ± 800	0 ~ ± ± 1000	0 ~ ± 1200	0 ~ ± ± 2000	A
Amandla kagesi akhiphayo	Vo			I-2.500 ± 2.0 * (IP / IPN)				V
Amandla kagesi akhiphayo	Vo	@ IP = 0, T = 25 ° C		I-2.500				V
Ukulayishwa kabusha	RL			> 2				Isibani
Hlinzeka ngogesi	VC			+ 12.0 ± 5%				V
Ukuqonda nqo	XG	@ IPN, T = 25 ° C		<± 1.0				%
I-Offset Votage	Isithunywa	@ IP = 0, t = 25 ° C		<± 25				mV
Ukuhluka kokushisa kwe-voe	Votule	@ IP = 0, -40 ~ + 85 ° C		<± 1.0				MV / ℃
I-Hysteresis Offset Voltage	Vo	@ IP = 0, ngemuva kwe-1 * IPN		<± 20				mV
Iphutha le-linerity	I-EVR			<1.0				% FS
di / dt				> 100				A / μs
Isikhathi sokuphendula	ugele	@ 90% ye-IPN		<7.0				μs
Ukusetshenziswa kwamandla	IC			15				mA
Ibandlawi	BW	@ -3db, ipn		DC-20				Akha
I-Insulation Votage	Vd	@ 50 / 60hz, 1min, AC		I-				KV

Imininingwane ejwayelekile:

参数 Ipharamitha	符号 uphawu	数值 Inani	单位 Iyunithi
Ukushisa okusebenzayo	TA	-40 ~ +85	° C
Ukushisa okushisa	Ts	-55 ~ +125	° C
Ubunzima	m	-Mashumi	g
Into engopulasitiki	I-PBT G30 / G15, UL94- v0;
Amazinga	IEC60950-1: 2001
	En50178: 1998
	SJ20790-2000